2002. 10. 23 1/2 semiconductor technical data mjd112/l epitaxial planar npn transistor revision no : 3 monolithic construction with built in base-emitter shunt resistors industrial use. features high dc current gain. : h fe =1000(min.), v ce =4v, i c =1a. low collector-emitter saturation voltage. straight lead (ipak, "l" suffix) complementary to mjd117/l. maximum rating (ta=25 ) dpak dim millimeters a b c d f h i j k l 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 2.70 0.2 2.30 0.1 1.00 max 2.30 0.2 0.5 0.1 2.00 0.20 0.50 0.10 e 0.91 0.10 m 0.90 0.1 o a c d b e k i j q h f f m o p l 123 1. base 2. collector 3. emitter 1.00 0.10 p 0.95 max q + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector-emitter sustaining voltage v ceo(sus) i c =30ma, i b =0 100 - - v collector cut-off current i ceo v ce =50v, i b =0 - - 20 a i cbo v cb =100v, i e =0 - - 20 emitter cut-off current i ebo v eb =5v, i c =0 - - 2 ma dc current gain h fe v ce =3v, i c =0.5a 500 - - v ce =3v, i c =2a 1,000 12,000 - collector-emitter saturation voltage v ce(sat) i c =2a, i b =8ma - - 2.0 v base-emitter on voltage v be(on) v ce =3v, i c =2a - - 2.8 v current gain bandwidth product f t v ce =10v, i c =0.75a, f=1mhz 25 - - mhz collector output capacitance c ob v cb =10v, i e =0, f=0.1mhz - - 100 pf characteristic symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5 v collector current dc i c 2 a pulse 4 base current dc i b 50 ma collector power dissipation ta=25 p c 1.3 w tc=25 20 junction temperature t j 150 storage temperature range t stg -55 150 c b e r 10k ? 0.6k ? r 1 2 = = dim millimeters ipak d b q e h f f c a p l i j 123 a b c d e f g h i j l p q 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 9.50 0.6 2.30 0.1 0.76 0.1 1.0 max 2.30 0.2 0.5 0.1 0.50 0.1 1.0 0.1 0.90 max g 1. base 2. collector 3. emitter k 2.0 0.2 k + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _
2002. 10. 23 2/2 mjd112/l revision no : 3 saturation voltage ce(sat) collector current i (a) c v ,v - i h - i c collector current i (a) 0.01 0.03 0.1 0.3 fe dc current gain h p - ta c case temperature ta ( c) 0 c 0 power dissipation p (w) 50 100 150 200 5 10 15 20 25 fe c 135 100 300 500 1k 3k 5k 10k v =3v ce ce(sat) c v , v (v) 0.1 0.5 0.3 0.03 0.01 0.1 1 3 0.3 1 3 5 10 i /i =250 5 c v be(sat) v ce(sat) b be(sat) be(sat) 100 10 200 50 30 3 1 collector-base voltage v (v) cb cb ob c - v capacitance c (pf) ob 510 30 50 f=0.1mhz collector-emitter voltage v (v) safe operating area collector current i (a) 1 0.01 c ce 3 10 30 100 200 0.03 0.05 0.1 0.3 0.5 1 3 5 10 single nonrepetive pulse tc=25 c curves must be dreated linearly with increase in temperature * i max.(pulsed)* c dc operation 100 s* 1 ms* 5ms* tc=25 c
|
